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TO-252AA
Discrete Semiconductor Products

FQD17P06TM

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 12 A, 135 MILLIOHMS, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

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TO-252AA
Discrete Semiconductor Products

FQD17P06TM

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 12 A, 135 MILLIOHMS, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFQD17P06TM
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.5 W, 44 W
Rds On (Max) @ Id, Vgs135 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.01
10$ 0.83
100$ 0.65
500$ 0.55
1000$ 0.45
Digi-Reel® 1$ 1.01
10$ 0.83
100$ 0.65
500$ 0.55
1000$ 0.45
Tape & Reel (TR) 2500$ 0.42
5000$ 0.40
12500$ 0.38
25000$ 0.38
NewarkEach (Supplied on Full Reel) 1$ 0.52
3000$ 0.50
6000$ 0.46
12000$ 0.41
18000$ 0.40
30000$ 0.39
ON SemiconductorN/A 1$ 0.35

Description

General part information

FQD17P06 Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.