FQD17P06 Series

Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK

Catalog

Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
ON Semiconductor FQD17P06TM	-55 °C	150 °C	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	2.5 W 44 W	10 V	MOSFET (Metal Oxide)	P-Channel	25 V	27 nC	900 pF	135 mOhm	12 A	60 V

Catalog

Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK

Key Features

-12A, -60V, RDS(on)= 135mΩ(Max.) @VGS= -10 V, ID= -6A

• Low gate charge ( Typ. 21nC)

• Low Crss( Typ. 80pF)

• 100% avalanche tested

Description

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.