Specification	FDMS86150A

Current - Continuous Drain (Id) @ 25°C	16 A, 60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	4665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	113 W, 2.7 W
Rds On (Max) @ Id, Vgs	4.85 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDMS86150A Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDMS86150A	8-PowerTDFN	4.85 mOhm	4 V	100 V	20 V	Surface Mount	2.7 W 113 W	16 A 60 A	Power56	N-Channel	6 V 10 V	4665 pF	66 nC	-55 °C	150 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.93
		10	$ 3.30
		100	$ 2.67
		500	$ 2.37
		1000	$ 2.03
	Digi-Reel®	1	$ 3.93
		10	$ 3.30
		100	$ 2.67
		500	$ 2.37
		1000	$ 2.03
	Tape & Reel (TR)	3000	$ 1.91
Newark	Each	500	$ 1.96
ON Semiconductor	N/A	1	$ 1.69

Description

General part information

FDMS86150A Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process thant hasbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance.