Discrete Semiconductor Products

SIS4608DN-T1-GE3

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N-CHANNEL 60 V (D-S) MOSFET POWE

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Discrete Semiconductor Products

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N-CHANNEL 60 V (D-S) MOSFET POWE

Technical Specifications

Parameters and characteristics for this part

Specification	SIS4608DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35.7 A, 12.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	27.1 W, 3.3 W
Rds On (Max) @ Id, Vgs	11.8 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Technology
Vishay General Semiconductor - Diodes Division SIS4608DN-T1-GE3	11.8 mOhm	Surface Mount	4 V	18 nC	12.4 A 35.7 A	3.3 W 27.1 W	60 V	PowerPAK® 1212-8	10 V	7.5 V	PowerPAK® 1212-8	-55 °C	150 °C	740 pF	N-Channel	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 12.4A (Ta), 35.7A (Tc) 3.3W (Ta), 27.1W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources