SIS4608 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 60 V (D-S) MOSFET POWE
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 11.8 mOhm | Surface Mount | 4 V | 18 nC | 12.4 A 35.7 A | 3.3 W 27.1 W | 60 V | PowerPAK® 1212-8 | 10 V | 7.5 V | PowerPAK® 1212-8 | -55 °C | 150 °C | 740 pF | N-Channel | 20 V | MOSFET (Metal Oxide) |