Discrete Semiconductor Products

SI9933CDY-T1-E3

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MOSFET 2P-CH 20V 4A 8SOIC

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Discrete Semiconductor Products

Active

MOSFET 2P-CH 20V 4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI9933CDY-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI9933CDY-T1-E3	4 A	1.4 V	58 mOhm	Logic Level Gate	Surface Mount	2 P-Channel	26 nC	665 pF	MOSFET (Metal Oxide)	8-SOIC	150 °C	-50 °C	20 V	8-SOIC	3.9 mm	0.154 in	3.1 W
Vishay General Semiconductor - Diodes Division SI9933BDY-T1-E3	3.6 A	1.4 V	60 mOhm	Logic Level Gate	Surface Mount	2 P-Channel	9 nC		MOSFET (Metal Oxide)	8-SOIC	150 °C	-55 °C	20 V	8-SOIC	3.9 mm	0.154 in	1.1 W

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General part information

Mosfet Array 20V 4A 3.1W Surface Mount 8-SOIC

Technical documentation and resources