SI9933 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2P-CH 20V 4A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Feature | Mounting Type | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 A | 1.4 V | 58 mOhm | Logic Level Gate | Surface Mount | 2 P-Channel | 26 nC | 665 pF | MOSFET (Metal Oxide) | 8-SOIC | 150 °C | -50 °C | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 3.1 W |
Vishay General Semiconductor - Diodes Division | 3.6 A | 1.4 V | 60 mOhm | Logic Level Gate | Surface Mount | 2 P-Channel | 9 nC | MOSFET (Metal Oxide) | 8-SOIC | 150 °C | -55 °C | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 1.1 W |