STB18NM80
ActiveMOSFET TRANSISTOR, N CHANNEL, 17 A, 800 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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STB18NM80
ActiveMOSFET TRANSISTOR, N CHANNEL, 17 A, 800 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB18NM80 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs [Max] | 295 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
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Description
General part information
STB18NM80 Series
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources