Specification	FGB7N60UNDF

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	21 A
Gate Charge	18 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	83 W
Reverse Recovery Time (trr)	32.3 ns
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	104 µJ, 99 µJ
Td (on/off) @ 25°C	32.3 ns, 5.9 ns
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGB7N60UNDF Series

IGBT, 600V, 7A, Short Circuit Rated

Part	Reverse Recovery Time (trr)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Supplier Device Package	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	IGBT Type	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGB7N60UNDF	32.3 ns	83 W	14 A	2.3 V	Surface Mount	5.9 ns 32.3 ns	TO-263 (D2PAK)	99 µJ 104 µJ	-55 °C	150 °C	21 A	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 nC	600 V
ON Semiconductor FGB7N60UNDF	32.3 ns	83 W	14 A	2.3 V	Surface Mount	5.9 ns 32.3 ns	TO-263 (D2PAK)	99 µJ 104 µJ	-55 °C	150 °C	21 A	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 nC	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	285	$ 1.11
		285	$ 1.11

Description

General part information

FGB7N60UNDF Series

Using advanced NPT IGBT technology, ON Semiconductor’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.