FGB7N60UNDF Series

IGBT, 600V, 7A, Short Circuit Rated

Catalog

IGBT, 600V, 7A, Short Circuit Rated

Part	Reverse Recovery Time (trr)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Supplier Device Package	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	IGBT Type	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGB7N60UNDF	32.3 ns	83 W	14 A	2.3 V	Surface Mount	5.9 ns 32.3 ns	TO-263 (D2PAK)	99 µJ 104 µJ	-55 °C	150 °C	21 A	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 nC	600 V
ON Semiconductor FGB7N60UNDF	32.3 ns	83 W	14 A	2.3 V	Surface Mount	5.9 ns 32.3 ns	TO-263 (D2PAK)	99 µJ 104 µJ	-55 °C	150 °C	21 A	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 nC	600 V

Catalog

IGBT, 600V, 7A, Short Circuit Rated

Key Features

• Short circuit rated 10us

• High current capability

• High input impedance

• Fast switching

• RoHS compliant

Description

Using advanced NPT IGBT technology, ON Semiconductor’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.