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2N3792
Discrete Semiconductor Products

JANTXV2N5039

Active
Microchip Technology

75V 20A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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Documents2N5038 2N5039
2N3792
Discrete Semiconductor Products

JANTXV2N5039

Active
Microchip Technology

75V 20A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N5038 2N5039

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5039
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-3, TO-204AA
QualificationMIL-PRF-19500/439
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 87.50
Microchip DirectN/A 1$ 87.50
NewarkEach 1$ 87.50
100$ 81.24
500$ 78.11

Description

General part information

JANTXV2N5039-Transistor Series

This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.

Documents

Technical documentation and resources