Discrete Semiconductor Products

STD11NM60ND

Obsolete

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A FDMESH II POWER MOSFET IN A DPAK PACKAGE

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DocumentsDS5797 AN2842 +17

Discrete Semiconductor Products

STD11NM60ND

Obsolete

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A FDMESH II POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsDS5797 AN2842 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD11NM60ND

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STD11NM60ND Series

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id
STMicroelectronics STD11NM60ND	Surface Mount	30 nC	450 mOhm	850 pF	10 A	MOSFET (Metal Oxide)	600 V	150 °C	90 W	10 V	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	25 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2489	$ 4.67
Mouser	N/A	1	$ 4.24
		10	$ 3.04
		100	$ 2.20
		500	$ 1.81
		1000	$ 1.69
		2500	$ 1.66

Description

General part information

STD11NM60ND Series

The device is an N-channel FDmesh II Power MOSFET that belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.The worldwide best RDS(on)* area amongst the fast recovery diode devices100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceExtremely high dv/dt and avalanche capabilities