Discrete Semiconductor Products
STGB3NC120HDT4
ActiveSTMicroelectronics
IGBT, 14 A, 2.3 V, 75 W, 1.2 KV, TO-263 (D2PAK), 3 PINS
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Discrete Semiconductor Products
STGB3NC120HDT4
ActiveSTMicroelectronics
IGBT, 14 A, 2.3 V, 75 W, 1.2 KV, TO-263 (D2PAK), 3 PINS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB3NC120HDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 14 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Gate Charge | 24 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 75 W |
| Reverse Recovery Time (trr) | 51 ns |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 236 µJ, 290 µJ |
| Td (on/off) @ 25°C | 118 ns, 15 ns |
| Test Condition | 10 Ohm, 15 V, 800 V, 3 A |
| Vce(on) (Max) @ Vge, Ic | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB3NC120HD Series
This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode.
Documents
Technical documentation and resources