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Discrete Semiconductor Products

JANTXV2N5664P

Active
Microchip Technology

200V 5A 2.5W NPN PIN-D TEST POWER BJT THT TO-66 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

JANTXV2N5664P

Active
Microchip Technology

200V 5A 2.5W NPN PIN-D TEST POWER BJT THT TO-66 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5664P
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]2.5 W
QualificationMIL-PRF-19500/455
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 39.83
Microchip DirectN/A 1$ 42.90
NewarkEach 100$ 39.83
500$ 38.30

Description

General part information

JANTXV2N5664P-Transistor-PIND Series

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Documents

Technical documentation and resources