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TO-263 (KTT)
Discrete Semiconductor Products

CSD19535KTT

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 3.4 MOHM

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TO-263 (KTT)
Discrete Semiconductor Products

CSD19535KTT

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 3.4 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD19535KTT
Current - Continuous Drain (Id) @ 25°C200 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]7930 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs [Max]3.4 mOhm
Supplier Device PackageTO-263 (DDPAK-3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.29
10$ 2.76
100$ 2.24
Digi-Reel® 1$ 3.29
10$ 2.76
100$ 2.24
Tape & Reel (TR) 500$ 1.99
1000$ 1.70
2500$ 1.60
5000$ 1.54
Texas InstrumentsLARGE T&R 1$ 2.26
100$ 1.98
250$ 1.39
1000$ 1.12

Description

General part information

CSD19535KTT Series

This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.