Specification	NSVBAS16W1T1G

Current - Average Rectified (Io) (per Diode)	200 mA
Current - Reverse Leakage @ Vr	1 µA
Diode Configuration	3 Independent
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Qualification	AEC-Q101
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC70-6, SC-88, SOT-363
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

NSVBAS16 Series

Ultra‐High Speed Switching Diodes - Triple Configuration in SC-88

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Current - Average Rectified (Io) (per Diode)	Speed	Speed	Package / Case	Supplier Device Package	Diode Configuration	Grade	Current - Reverse Leakage @ Vr
ON Semiconductor NSVBAS16W1T1G	150 °C	-55 °C	Standard	Surface Mount	100 V	AEC-Q101	200 mA	Any Speed	200 mA	6-TSSOP SC-88 SOT-363	SC-88 SC70-6 SOT-363	3 Independent	Automotive	1 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.29
		10	$ 0.18
		100	$ 0.11
		500	$ 0.08
		1000	$ 0.07
	Digi-Reel®	1	$ 0.29
		10	$ 0.18
		100	$ 0.11
		500	$ 0.08
		1000	$ 0.07
	Tape & Reel (TR)	3000	$ 0.06
		6000	$ 0.05
		9000	$ 0.05
		15000	$ 0.05
		21000	$ 0.05
		30000	$ 0.04
		75000	$ 0.04
		150000	$ 0.04
Newark	Each	2500	$ 0.05
		10000	$ 0.04
		25000	$ 0.04
ON Semiconductor	N/A	1	$ 0.04

Description

General part information

NSVBAS16 Series

These Silicon Epitaxial Planar Diodes are designed for use in ultra-high speed switching applications. These devices are in a triple diode configuration and housed in the SC−88 package which is designed for low power surface mount applications where PCB space is at a premium.