NSVBAS16 Series

Ultra‐High Speed Switching Diodes - Triple Configuration in SC-88

Catalog

Ultra‐High Speed Switching Diodes - Triple Configuration in SC-88

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Current - Average Rectified (Io) (per Diode)	Speed	Speed	Package / Case	Supplier Device Package	Diode Configuration	Grade	Current - Reverse Leakage @ Vr
ON Semiconductor NSVBAS16W1T1G	150 °C	-55 °C	Standard	Surface Mount	100 V	AEC-Q101	200 mA	Any Speed	200 mA	6-TSSOP SC-88 SOT-363	SC-88 SC70-6 SOT-363	3 Independent	Automotive	1 µA

Catalog

Ultra‐High Speed Switching Diodes - Triple Configuration in SC-88

Key Features

• Fast trr: < 3.0 ns

• Low CD: < 2.0 pF

• Triple Diode Configuration in Small Package

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and areRoHS Compliant*

Description

These Silicon Epitaxial Planar Diodes are designed for use in ultra-high speed switching applications. These devices are in a triple diode configuration and housed in the SC−88 package which is designed for low power surface mount applications where PCB space is at a premium.