Discrete Semiconductor Products
STP16N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.32 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP16N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.32 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP16N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 360 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 0.99 | |
Description
General part information
STP16N65M2 Series
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources