Discrete Semiconductor Products

STP17N62K3

Obsolete

MOSFET N-CH 620V 15.5A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 620V 15.5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP17N62K3

Current - Continuous Drain (Id) @ 25°C	15.5 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Operating Temperature	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP17N62K3	30 V	150 °C	TO-220-3	620 V	2500 pF	94 nC	4.5 V	N-Channel	380 mOhm	MOSFET (Metal Oxide)	190 W	10 V	TO-220	Through Hole	15.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 620 V 15.5A (Tc) 190W (Tc) Through Hole TO-220

Technical documentation and resources