Discrete Semiconductor Products

SIHP20N50E-GE3

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MOSFET N-CH 500V 19A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 500V 19A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP20N50E-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1640 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs [Max]	184 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHP20N50E-GE3	N-Channel	MOSFET (Metal Oxide)	179 W	184 mOhm	500 V	TO-220-3	30 V	Through Hole	19 A	10 V	TO-220AB	1640 pF	-55 °C	150 °C	92 nC	4 V

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General part information

N-Channel 500 V 19A (Tc) 179W (Tc) Through Hole TO-220AB

Technical documentation and resources