SIHP20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 19A TO220AB
| Part | FET Type | Technology | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | 179 W | 184 mOhm | 500 V | TO-220-3 | 30 V | Through Hole | 19 A | 10 V | TO-220AB | 1640 pF | -55 °C | 150 °C | 92 nC | 4 V |