SCT011H75G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 11.4 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet +24

Discrete Semiconductor Products

SCT011H75G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 11.4 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsDatasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT011H75G3AG

null

SCT011H75G3AG Series

Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package

Part
STMicroelectronics SCT011H75G3AG

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 20.62

Description

General part information

SCT011H75G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.