Discrete Semiconductor Products

SQJ211ELP-T1_GE3

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MOSFET P-CH 100V 33.6A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 100V 33.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ211ELP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	33.6 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJ211ELP-T1_GE3	P-Channel	-55 °C	175 ░C	3800 pF	PowerPAK® SO-8	30 mOhm	PowerPAK® SO-8	68 W	MOSFET (Metal Oxide)	68 nC	2.5 V	Surface Mount	20 V	100 V	33.6 A

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General part information

P-Channel 100 V 33.6A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources