SQJ211 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 100V 33.6A PPAK SO-8
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | P-Channel | -55 °C | 175 ░C | 3800 pF | PowerPAK® SO-8 | 30 mOhm | PowerPAK® SO-8 | 68 W | MOSFET (Metal Oxide) | 68 nC | 2.5 V | Surface Mount | 20 V | 100 V | 33.6 A |