Discrete Semiconductor Products

SCT2280KEGC11

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 14 A, 1.2 KV, 0.28 OHM, TO-247N

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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

SCT2280KEGC11

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 14 A, 1.2 KV, 0.28 OHM, TO-247N

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT2280KEGC11

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Input Capacitance (Ciss) (Max) @ Vds	667 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max)	108 W
Rds On (Max) @ Id, Vgs [Max]	364 mOhm
Supplier Device Package	TO-247N
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-6 V
Vgs(th) (Max) @ Id	4 V

SCT2280KEHR Series

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Part	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Qualification	Grade
Rohm Semiconductor SCT2280KEGC11	175 °C	364 mOhm	4 V	TO-247-3	-6 V	22 V	TO-247N	1200 V	36 nC	14 A	Through Hole	18 V	667 pF	N-Channel	108 W
Rohm Semiconductor SCT2280KEHRC11	175 °C	364 mOhm	4 V	TO-247-3	-6 V	22 V	TO-247N	1200 V	36 nC	14 A	Through Hole	18 V	667 pF	N-Channel	108 W	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.34
		10	$ 8.67
		450	$ 7.40
Newark	Each	1	$ 11.15
		10	$ 8.02
		25	$ 7.94
		50	$ 7.86
		100	$ 7.78
		250	$ 7.70

Description

General part information

SCT2280KEHR Series

This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet