Discrete Semiconductor Products

SI5855DC-T1-E3

Obsolete

MOSFET P-CH 20V 2.7A 1206-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.7A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5855DC-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.7 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	FET Feature	Technology
Vishay General Semiconductor - Diodes Division SI5855DC-T1-E3	1.8 V 4.5 V	8 V	1 V	P-Channel	Surface Mount	2.7 A	20 V	-55 °C	150 °C	7.7 nC	110 mOhm	1.1 W	1206-8 ChipFET™	Schottky Diode (Isolated)	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™

Technical documentation and resources

No documents available