SI5855 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 2.7A 1206-8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | FET Feature | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.8 V 4.5 V | 8 V | 1 V | P-Channel | Surface Mount | 2.7 A | 20 V | -55 °C | 150 °C | 7.7 nC | 110 mOhm | 1.1 W | 1206-8 ChipFET™ | Schottky Diode (Isolated) | MOSFET (Metal Oxide) |