Specification	FDB045AN08A0-F085

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	138 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	310 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB045AN08_F085 Series

N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Grade	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
ON Semiconductor FDB045AN08A0-F085	MOSFET (Metal Oxide)	138 nC	19 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	4 V	-55 °C	175 ░C	75 V	20 V	Surface Mount	N-Channel	6 V 10 V	4.5 mOhm	AEC-Q101	TO-263 (D2PAK)	6600 pF	310 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB045AN08_F085 Series

N-Channel PowerTrench®MOSFET 75 V, 80 A, 3.9 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.