
Discrete Semiconductor Products
NVMYS2D3N06CTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 2.6 MΩ, 176 A, SINGLE N-CHANNEL, NVMYS2D3N06CTWG
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Discrete Semiconductor Products
NVMYS2D3N06CTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 2.6 MΩ, 176 A, SINGLE N-CHANNEL, NVMYS2D3N06CTWG
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Technical Specifications
Parameters and characteristics for this part
| Specification | NVMYS2D3N06CTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28.7 A, 171 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3584 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 134.4 W, 3.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm |
| Supplier Device Package | LFPAK4 |
| Supplier Device Package [x] | 5 |
| Supplier Device Package [y] | 6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.82 | |
| Digi-Reel® | 1 | $ 2.82 | ||
| Tape & Reel (TR) | 3000 | $ 0.84 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 1.01 | |
| 6000 | $ 0.94 | |||
| 12000 | $ 0.87 | |||
| 18000 | $ 0.84 | |||
| 30000 | $ 0.82 | |||
| ON Semiconductor | N/A | 1 | $ 0.89 | |
Description
General part information
NVMYS2D3N06C Series
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Documents
Technical documentation and resources