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SOT 1023
Discrete Semiconductor Products

NVMYS2D3N06CTWG

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ON Semiconductor

POWER MOSFET 60 V, 2.6 MΩ, 176 A, SINGLE N-CHANNEL, NVMYS2D3N06CTWG

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SOT 1023
Discrete Semiconductor Products

NVMYS2D3N06CTWG

Active
ON Semiconductor

POWER MOSFET 60 V, 2.6 MΩ, 176 A, SINGLE N-CHANNEL, NVMYS2D3N06CTWG

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS2D3N06CTWG
Current - Continuous Drain (Id) @ 25°C28.7 A, 171 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3584 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)134.4 W, 3.8 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.3 mOhm
Supplier Device PackageLFPAK4
Supplier Device Package [x]5
Supplier Device Package [y]6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.82
Digi-Reel® 1$ 2.82
Tape & Reel (TR) 3000$ 0.84
NewarkEach (Supplied on Full Reel) 3000$ 1.01
6000$ 0.94
12000$ 0.87
18000$ 0.84
30000$ 0.82
ON SemiconductorN/A 1$ 0.89

Description

General part information

NVMYS2D3N06C Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.