NVMYS2D3N06C Series

Power MOSFET 60 V, 2.6 mΩ, 176 A, Single N-Channel, NVMYS2D3N06CTWG

Catalog

Power MOSFET 60 V, 2.6 mΩ, 176 A, Single N-Channel, NVMYS2D3N06CTWG

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Grade
ON Semiconductor NVMYS2D3N06CTWG	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V	N-Channel	20 V	28.7 A 171 A	46 nC	4 V	3584 pF	Surface Mount	2.3 mOhm	SOT-1023 4-LFPAK	5	LFPAK4	6	3.8 W 134.4 W	10 V	AEC-Q101	Automotive

Catalog

Power MOSFET 60 V, 2.6 mΩ, 176 A, Single N-Channel, NVMYS2D3N06CTWG

Key Features

• Small Footprint (5x6mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK8 Package

• AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.