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Discrete Semiconductor Products

CSD16321Q5T

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

VSON-CLIP (DQH)
Discrete Semiconductor Products

CSD16321Q5T

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD16321Q5T
Current - Continuous Drain (Id) @ 25°C100 A, 29 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]3 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]19 nC
Input Capacitance (Ciss) (Max) @ Vds3100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)113 W, 3.1 W
Rds On (Max) @ Id, Vgs [Max]2.4 mOhm
Supplier Device Package8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-8 V
Vgs(th) (Max) @ Id1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.01
10$ 1.96
25$ 1.68
100$ 1.37
Digi-Reel® 1$ 3.01
10$ 1.96
25$ 1.68
100$ 1.37
Tape & Reel (TR) 250$ 1.22
500$ 1.13
750$ 1.08
1250$ 1.03
1750$ 1.00
2500$ 0.97
6250$ 0.90
Texas InstrumentsSMALL T&R 1$ 1.56
100$ 1.29
250$ 0.93
1000$ 0.70

Description

General part information

CSD16321Q5 Series

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.