CSD16321Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Texas Instruments CSD16321Q5T	2.4 mOhm	1.4 V	3.1 W 113 W	25 V	-55 °C	150 °C	MOSFET (Metal Oxide)	19 nC	3100 pF	N-Channel	29 A 100 A	Surface Mount	10 V	-8 V	8-VSON-CLIP (5x6)	8-PowerTDFN	8 V	3 V

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Key Features

• Optimized for 5V gate driveUltra-low Qg and QgdLow-thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantSON 5mm × 6mm plastic packageOptimized for 5V gate driveUltra-low Qg and QgdLow-thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantSON 5mm × 6mm plastic package

Description

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.