2N5663
Active300V 2A 1W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES
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2N5663
Active300V 2A 1W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5663 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 200 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 800 mV |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 13 | $ 22.99 | |
| 100 | $ 20.71 | |||
| Microchip Direct | N/A | 1 | $ 22.29 | |
| Newark | Each | 100 | $ 20.71 | |
| 500 | $ 19.90 | |||
Description
General part information
2N5663-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. The device packages for the encapsulated device types are as follows: (2N5660 and 2N5661) (similar to TO-66). The device packages for the encapsulated device types are as follows: (2N5662 and 2N5663) (similar to TO-5). The surfacemount device packages for the encapsulated device types are as follows: (2N5660U3, and 2N5661U3) in accordance with SMD 0.5 (U3).
Documents
Technical documentation and resources