Discrete Semiconductor Products
STL100N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.0062 OHM TYP., 19 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Discrete Semiconductor Products
STL100N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.0062 OHM TYP., 19 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL100N10F7 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 5 W, 100 W |
| Rds On (Max) @ Id, Vgs | 7.3 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL100N10F7 Series
This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources
