Specification	MBR3100G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	600 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-27, DO-201AA
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	790 mV

MBR3100 Series

Schottky Barrier Rectifier, 100 V, 3.0 A

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)
ON Semiconductor MBR3100G	790 mV	600 µA	Axial DO-201AA DO-27	Through Hole	175 ░C	-65 C	Axial	200 mA 500 ns	100 V	Schottky	3 A
ON Semiconductor MBR3100	790 mV	600 µA	Axial DO-201AA DO-27	Through Hole	175 ░C	-65 C	Axial	200 mA 500 ns	100 V	Schottky	3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBR3100 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.