MBR3100 Series

Schottky Barrier Rectifier, 100 V, 3.0 A

Catalog

Schottky Barrier Rectifier, 100 V, 3.0 A

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)
ON Semiconductor MBR3100G	790 mV	600 µA	Axial DO-201AA DO-27	Through Hole	175 ░C	-65 C	Axial	200 mA 500 ns	100 V	Schottky	3 A
ON Semiconductor MBR3100	790 mV	600 µA	Axial DO-201AA DO-27	Through Hole	175 ░C	-65 C	Axial	200 mA 500 ns	100 V	Schottky	3 A

Catalog

Schottky Barrier Rectifier, 100 V, 3.0 A

Key Features

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard-Ring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• High Surge CapacityMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads areReadily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped in plastic bags, 5,000 per bag

• Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the partnumber

• Polarity: Cathode indicated by Polarity Band

• Marking: B3100

• Pb-Free Packages are Available

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.