Discrete Semiconductor Products

BD436G

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POWER BIPOLAR TRANSISTOR, PNP

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Discrete Semiconductor Products

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POWER BIPOLAR TRANSISTOR, PNP

Technical Specifications

Parameters and characteristics for this part

Specification	BD436G

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-225-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

PNP Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Operating Temperature	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BD436G	500 mV	4 A	3 MHz	36 W	150 °C	TO-126-3 TO-225AA	PNP	32 V	50 hFE	TO-225-3	Through Hole	100 µA
ON Semiconductor BD436TG	500 mV	4 A	3 MHz	36 W		TO-126-3 TO-225AA	PNP	32 V		TO-126	Through Hole	100 µA	85	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	888	$ 0.34

General part information

This series of plastic, medium-power PNP transistors can be used for amplifier and switching applications. Complementary types are BD437 and BD441.