Specification	MSCM20XM10T3XG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	108 A
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	161 nC
Input Capacitance (Ciss) (Max) @ Vds	10700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	341 W
Rds On (Max) @ Id, Vgs	9.7 mOhm
Supplier Device Package	SP3X
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

MSCM20XM10T3XG-Module Series

200V/Three Phase bridge/Si Mosfet modules

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case
Microchip Technology MSCM20XM10T3XG	108 A	161 nC	MOSFET (Metal Oxide)	200 V	5 V	10700 pF	6 N-Channel (3-Phase Bridge)	341 W	-40 °C	125 °C	9.7 mOhm	Chassis Mount	SP3X	Module
Microchip Technology MSCM20XM16F4G	77 A			200 V								Chassis Mount	SP4	Module

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* MOSFETs

* Low RDSon

* Low input and Miller capacitance

Technical documentation and resources