Discrete Semiconductor Products

STW13NK100Z

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STMicroelectronics

N-CHANNEL 1000 V, 0.56 OHM TYP., 13 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

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DocumentsAN2344 AN4250 +13

Discrete Semiconductor Products

STW13NK100Z

Active

STMicroelectronics

N-CHANNEL 1000 V, 0.56 OHM TYP., 13 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsAN2344 AN4250 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW13NK100Z

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	266 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STW13NK100Z Series

N-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW13NK100Z	TO-247-3	266 nC	150 °C	-55 °C	Through Hole	350 W	TO-247-3	N-Channel	13 A	MOSFET (Metal Oxide)	6000 pF	4.5 V	700 mOhm	1000 V	30 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	600	$ 5.91
		1200	$ 5.86
Digikey	N/A	657	$ 9.67
Newark	Each	1	$ 10.18
		10	$ 10.16
		25	$ 7.60

Description

General part information

STW13NK100Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.