SIR690DP-T1-RE3

Active

MOSFET N-CH 200V 34.4A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 200V 34.4A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR690DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	34.4 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1935 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR690DP-T1-GE3	1935 pF	20 V	Surface Mount	PowerPAK® SO-8	4 V	200 V	35 mOhm	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	104 W	34.4 A	10 V	7.5 V	37 nC	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SIR690DP-T1-RE3	1935 pF	20 V	Surface Mount	PowerPAK® SO-8	4 V	200 V	35 mOhm	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	104 W	34.4 A	10 V	7.5 V	48 nC	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources