SIR690 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 200V 34.4A PPAK SO-8
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1935 pF | 20 V | Surface Mount | PowerPAK® SO-8 | 4 V | 200 V | 35 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 104 W | 34.4 A | 10 V | 7.5 V | 37 nC | PowerPAK® SO-8 |
Vishay General Semiconductor - Diodes Division | 1935 pF | 20 V | Surface Mount | PowerPAK® SO-8 | 4 V | 200 V | 35 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 104 W | 34.4 A | 10 V | 7.5 V | 48 nC | PowerPAK® SO-8 |