Discrete Semiconductor Products

SI5513CDC-T1-E3

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MOSFET N/P-CH 20V 4A/3.7A 1206-8

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V 4A/3.7A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5513CDC-T1-E3

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds	285 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Mounting Type	Supplier Device Package	FET Feature	Power - Max [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5513DC-T1-GE3	-55 °C	150 °C	75 mOhm	2.1 A 3.1 A	N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	1.1 W	20 V	1.5 V	6 nC
Vishay General Semiconductor - Diodes Division SI5513CDC-T1-E3	-55 °C	150 °C	55 mOhm		N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	3.1 W	20 V	1.5 V	4.2 nC	285 pF
Vishay General Semiconductor - Diodes Division SI5513CDC-T1-GE3	-55 °C	150 °C	55 mOhm		N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	3.1 W	20 V	1.5 V	4.2 nC	285 pF

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General part information

Mosfet Array 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Technical documentation and resources