SI5513 Series

Catalog

MOSFET N/P-CH 20V 3.1A 1206-8

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Mounting Type	Supplier Device Package	FET Feature	Power - Max [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5513DC-T1-GE3	-55 °C	150 °C	75 mOhm	2.1 A 3.1 A	N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	1.1 W	20 V	1.5 V	6 nC
Vishay General Semiconductor - Diodes Division SI5513CDC-T1-E3	-55 °C	150 °C	55 mOhm		N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	3.1 W	20 V	1.5 V	4.2 nC	285 pF
Vishay General Semiconductor - Diodes Division SI5513CDC-T1-GE3	-55 °C	150 °C	55 mOhm		N and P-Channel	MOSFET (Metal Oxide)	Surface Mount	1206-8 ChipFET™	Logic Level Gate	3.1 W	20 V	1.5 V	4.2 nC	285 pF