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DIODES INC. DMN3027LFG-7
Discrete Semiconductor Products

STL66N3LLH5

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 30 V, 4.5 MOHM TYP., 80 A STRIPFET H5 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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DIODES INC. DMN3027LFG-7
Discrete Semiconductor Products

STL66N3LLH5

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 30 V, 4.5 MOHM TYP., 80 A STRIPFET H5 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL66N3LLH5
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1500 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)72 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs5.8 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)22 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3000$ 2.07
NewarkEach (Supplied on Cut Tape) 1$ 2.34
10$ 1.61
25$ 1.48
50$ 1.34
100$ 1.20
250$ 1.11
500$ 1.02
1000$ 0.96

Description

General part information

STL66N3LLH5 Series

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.