Specification	PHPT60610PYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	85 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max [Max]	1.5 W
Qualification	AEC-Q100
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	470 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PHPT60610PY Series

60 V, 10 A PNP high power bipolar transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max [Max]	Package / Case	Mounting Type	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Qualification	Grade	Frequency - Transition
Freescale Semiconductor - NXP PHPT60610PYX	60 V	PNP	1.5 W	SC-100 SOT-669	Surface Mount	175 °C	100 nA	LFPAK56 Power-SO8	120 hFE	470 mV	AEC-Q100	Automotive	85 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources