60 V, 10 A PNP high power bipolar transistor
60 V, 10 A PNP high power bipolar transistor
60 V, 10 A PNP high power bipolar transistor
| Part | Voltage - Collector Emitter Breakdown (Max) | Transistor Type | Power - Max [Max] | Package / Case | Mounting Type | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic [Max] | Qualification | Grade | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 60 V | PNP | 1.5 W | SC-100 SOT-669 | Surface Mount | 175 °C | 100 nA | LFPAK56 Power-SO8 | 120 hFE | 470 mV | AEC-Q100 | Automotive | 85 MHz |