Discrete Semiconductor Products

TK5A60W,S4VX

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MOSFET N-CH 600V 5.4A TO220SIS

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Discrete Semiconductor Products

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MOSFET N-CH 600V 5.4A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK5A60W,S4VX

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK5A60W,S4VX	30 V	380 pF	5.4 A	10.5 nC	150 °C	3.7 V	TO-220-3 Full Pack	900 mOhm	MOSFET (Metal Oxide)	600 V	TO-220SIS	10 V	Through Hole	N-Channel
Toshiba Semiconductor and Storage TK5A60D(STA4,Q,M)	30 V	700 pF	5 A	16 nC	150 °C	4.4 V	TO-220-3 Full Pack	1.43 Ohm	MOSFET (Metal Oxide)	600 V	TO-220SIS	10 V	Through Hole	N-Channel	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 5.4A (Ta) 30W (Tc) Through Hole TO-220SIS

Technical documentation and resources