TK5A60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 600V 5.4A TO220SIS
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 30 V | 380 pF | 5.4 A | 10.5 nC | 150 °C | 3.7 V | TO-220-3 Full Pack | 900 mOhm | MOSFET (Metal Oxide) | 600 V | TO-220SIS | 10 V | Through Hole | N-Channel | |
 Toshiba Semiconductor and Storage | 30 V | 700 pF | 5 A | 16 nC | 150 °C | 4.4 V | TO-220-3 Full Pack | 1.43 Ohm | MOSFET (Metal Oxide) | 600 V | TO-220SIS | 10 V | Through Hole | N-Channel | 35 W |