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Technical Specifications
Parameters and characteristics for this part
| Specification | APT17F80B |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 500 W |
| Rds On (Max) @ Id, Vgs | 580 mOhm |
| Supplier Device Package | TO-247 [B] |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
FREDFET-800V Series
800V FREDFET
| Part | Vgs(th) (Max) @ Id [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 5 V | Chassis Mount | -55 °C | 150 °C | 570 nC | 57 A | 30 V | 800 V | 10 V | 960 W | 110 mOhm | ISOTOP® | MOSFET (Metal Oxide) | 17550 pF | N-Channel | SOT-227-4 miniBLOC | |||
 Microchip Technology | Chassis Mount | -55 °C | 150 °C | 195 nC | 33 A | 800 V | 220 mOhm | ISOTOP® | MOSFET (Metal Oxide) | 5200 pF | N-Channel | SOT-227-4 miniBLOC | 5 V | ||||||
 Microchip Technology | Through Hole | -55 °C | 150 °C | 41 A | 30 V | 800 V | 10 V | 1040 W | 240 mOhm | T-MAX™ [B2] | MOSFET (Metal Oxide) | 8070 pF | N-Channel | TO-247-3 Variant | 5 V | 260 nC | |||
Microchip Technology | Through Hole | 20 A | 800 V | 430 mOhm | TO-247 [B] | MOSFET (Metal Oxide) | 2500 pF | N-Channel | TO-247-3 | 85 nC | |||||||||
Microchip Technology | Through Hole | 195 nC | 38 A | 800 V | 220 mOhm | T-MAX™ [B2] | MOSFET (Metal Oxide) | 5200 pF | N-Channel | TO-247-3 Variant | 5 V | ||||||||
Microchip Technology | Through Hole | -55 °C | 150 °C | 18 A | 30 V | 800 V | 10 V | 500 W | 580 mOhm | TO-247 [B] | MOSFET (Metal Oxide) | N-Channel | TO-247-3 | 122 nC | |||||
 Microchip Technology | Through Hole | -55 °C | 150 °C | 160 nC | 31 A | 30 V | 800 V | 10 V | 565 W | 260 mOhm | TO-264 [L] | MOSFET (Metal Oxide) | 4670 pF | N-Channel | TO-264-3 TO-264AA | 5 V | |||
Microchip Technology | Through Hole | -55 °C | 150 °C | 23 A | 30 V | 800 V | 10 V | 625 W | TO-247 [B] | MOSFET (Metal Oxide) | 4595 pF | N-Channel | TO-247-3 | 150 nC | |||||
 Microchip Technology | Surface Mount | -55 °C | 150 °C | 18 A | 30 V | 800 V | 10 V | 500 W | 580 mOhm | D3PAK | MOSFET (Metal Oxide) | N-Channel | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 122 nC | |||||
Microchip Technology | Chassis Mount | 25 A | 800 V | 300 mOhm | ISOTOP® | MOSFET (Metal Oxide) | N-Channel | SOT-227-4 miniBLOC | 4 V | 510 nC | 7900 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 70 | $ 7.59 | |
| Microchip Direct | TUBE | 1 | $ 7.59 | |
| 100 | $ 6.54 | |||
| 250 | $ 6.31 | |||
| 500 | $ 6.16 | |||
| 1000 | $ 6.02 | |||
| 5000 | $ 5.82 | |||
Description
General part information
FREDFET-800V Series
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
Documents
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