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INFINEON IRFB4127PBF
Discrete Semiconductor Products

FCP600N60Z

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 7.4 A, 600 MΩ

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INFINEON IRFB4127PBF
Discrete Semiconductor Products

FCP600N60Z

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 7.4 A, 600 MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCP600N60Z
Current - Continuous Drain (Id) @ 25°C7.4 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds1120 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 258$ 1.16
258$ 1.16
Tube 1$ 3.14
1$ 3.14
50$ 1.57
50$ 1.57
100$ 1.42
100$ 1.42
500$ 1.15
500$ 1.15
1000$ 1.06
1000$ 1.06
2000$ 1.01
2000$ 1.01
NewarkEach 500$ 1.49
1000$ 1.34
2500$ 1.08
5000$ 1.05
ON SemiconductorN/A 1$ 0.93

Description

General part information

FCP600N60Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.